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Synthesis and electrical properties of CuBr2 complexes with 1,10-phenanthroline monohydrate
Taşcıoǧlu, Sülin, Kakı, Esra and Arı, Mehmet Synthesis and electrical properties of CuBr2 complexes with 1,10-phenanthroline monohydrate Chemical Papers, Vol.62, No. 3, 2008, 260-267
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Document type:
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Článok z časopisu / Journal Article |
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Collection:
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Chemical papers
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| Author(s) |
Taşcıoǧlu, Sülin
Kakı, Esra
Arı, Mehmet
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| Title |
Synthesis and electrical properties of CuBr2 complexes with 1,10-phenanthroline monohydrate
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| Journal name |
Chemical Papers
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| Publication date |
2008
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| Year available |
2008
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| Volume number |
62
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| Issue number |
3
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| ISSN |
0366-6352
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| Start page |
260
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| End page |
267
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| Place of publication |
Poland
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| Publisher |
Versita
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| Collection year |
2008
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| Language |
english
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| Subject |
250000 Chemical Sciences
250200 Inorganic Chemistry
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| Abstract/Summary |
Using 1,10-phenanthroline monohydrate and CuBr2 in molar ratios of 1:1 and 2:1, in CH3OH/H2O (ϕr = 1:1), the complexes [(phen)CuBr2]2, (I), and {[(phen)2CuBr]Br·H2O}, (II), have been prepared. The hydrogen bondings and aqua bridges between coordinated and noncoordinated bromides of II have been observed by XRD. Complex II has a triclinic crystal structure with distorted trigonal bipyramidal coordination geometry. Possibilities of ligand exchange with hydroxide or ammonia have been examined in both complexes. While the mononuclear complex II is stable in a refluxed ammonia solution and the complex {[phen)2CuBr]Br·3H2O}, (IV), trihydrate of II, is obtained; the binuclear complex I reacts with the ammonia solution to replace one of its bromides in the subunits with hydroxide to give {[(phen)2Cu2Br2(OH)2]·4H2O}, (III). Structural and electrical properties of the complexes have been investigated by elemental analysis, vibrational and electronic spectroscopy, mass spectrometry, TGA, XRD and the four-point probe method. The temperature coefficients of resistivity and the activation energies of the complexes have also been obtained. All complexes behave as intrinsic semiconductor in the temperature range of 310–440 K.
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