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Electrical resistivity and photoluminescence of lead iodide crystals
Matuchová, M., Žďánský, K., Svatuška, M., Zavadil, J. and Procházková, O. Electrical resistivity and photoluminescence of lead iodide crystals Chemical Papers, Vol.61, No. 1, 2007, 36-40
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Document type:
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Článok z časopisu / Journal Article |
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Collection:
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Chemical papers
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| Author(s) |
Matuchová, M.
Žďánský, K.
Svatuška, M.
Zavadil, J.
Procházková, O.
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| Title |
Electrical resistivity and photoluminescence of lead iodide crystals
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| Journal name |
Chemical Papers
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| Publication date |
2007
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| Year available |
2007
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| Volume number |
61
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| Issue number |
1
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| ISSN |
0366-6352
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| Start page |
36
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| End page |
40
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| Place of publication |
Poland
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| Publisher |
Versita
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| Collection year |
2007
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| Language |
english
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| Subject |
290000 Engineering and Technology
290600 Chemical Engineering
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| Abstract/Summary |
Direct synthesis of lead iodide, a promising material for X-ray and γ detectors operating at room temperature, was developed and optimized. The influence of admixture of rare earth elements Ce, Ho, Gd, Yb, Er, and Tb in concentrations 0.05–0.5 at. % on the quality of prepared PbI2 was investigated. Zone melting was employed in order to increase the lead iodide purity. Electrical and optical properties of PbI2 samples were assessed on the basis of the measurement of electrical resistivity and low-temperature photoluminescence. The electrical resistivity of synthesized samples varied from 109 Ω cm to 1011 Ω cm and occasionally it was increased up to 1013 Ω cm.
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