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Determination of Silicon in Tantalum nod its Compounds Using ICP-OES
Anil, G., Reddy, M. R. P., Kumar, A. and Prakash, T. L. Determination of Silicon in Tantalum nod its Compounds Using ICP-OES Chemical Papers, Vol.58, No. 3, 2004, 195-199
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Document type:
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Článok z časopisu / Journal Article |
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Collection:
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Chemical papers
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| Attached Files |
| Name |
Description |
MIMEType |
Size |
Downloads |
n583a195.pdf
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583a195.pdf |
application/pdf |
272.76KB |
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| Author(s) |
Anil, G.
Reddy, M. R. P.
Kumar, A.
Prakash, T. L.
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| Title |
Determination of Silicon in Tantalum nod its Compounds Using ICP-OES
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| Journal name |
Chemical Papers
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| Publication date |
2004
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| Year available |
2004
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| Volume number |
58
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| Issue number |
3
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| ISSN |
0366-6352
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| Start page |
195
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| End page |
199
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| Place of publication |
Poland
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| Publisher |
Versita
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| Collection year |
2004
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| Language |
english
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| Subject |
250000 Chemical Sciences
250500 Macromolecular Chemistry
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| Abstract/Summary |
Determination of trace levels of silicon in tantalum hydroxide potassium tantalum fluoride and tantalum powder using inductively coupled plasma optical emission spectrometer is presented, The main limitation for the analysis of silicon is its volatility, a high risk of contamination and its presence in hydrofluoric acid which causes a lot of difficulties in line selection and thereby analysis. Here, a novel process was applied for line selection using cupferron for partial precipitation of tantalum for selecting tantalum interference-free silicon line. Preparing samples in clean room controlled the contamination caused by silicon. The results of silicon analyzed in clean room and in open room are also presented.
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