Determination of Silicon in Tantalum nod its Compounds Using ICP-OES

Anil, G., Reddy, M. R. P., Kumar, A. and Prakash, T. L. Determination of Silicon in Tantalum nod its Compounds Using ICP-OES Chemical Papers, Vol.58, No. 3, 2004, 195-199

Document type: ńĆl√°nok z ńćasopisu / Journal Article
Collection: Chemical papers  
 
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Author(s) Anil, G.
Reddy, M. R. P.
Kumar, A.
Prakash, T. L.
Title Determination of Silicon in Tantalum nod its Compounds Using ICP-OES
Journal name Chemical Papers
Publication date 2004
Year available 2004
Volume number 58
Issue number 3
ISSN 0366-6352
Start page 195
End page 199
Place of publication Poland
Publisher Versita
Collection year 2004
Language english
Subject 250000 Chemical Sciences
250500 Macromolecular Chemistry
Abstract/Summary Determination of trace levels of silicon in tantalum hydroxide potassium tantalum fluoride and tantalum powder using inductively coupled plasma optical emission spectrometer is presented, The main limitation for the analysis of silicon is its volatility, a high risk of contamination and its presence in hydrofluoric acid which causes a lot of difficulties in line selection and thereby analysis. Here, a novel process was applied for line selection using cupferron for partial precipitation of tantalum for selecting tantalum interference-free silicon line. Preparing samples in clean room controlled the contamination caused by silicon. The results of silicon analyzed in clean room and in open room are also presented.
 
 
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